Electronic, Photonic, Nano, Low-dimensional and Quantum Materials
WDefect-induced effects in low-dimensional and novel materials
Following the success of the eighth previous similar symposia held since 2012, this edition addresses the progress in tailoring properties of low-dimensional and other novel materials including, but not limited to, semiconductors and oxides by introducing defects and impurities. Native, technological and radiation defects will be considered theoretically and experimentally.
Scope:
Defects, inevitably appearing in any materials, play a vital role in shaping materials’ electronic, optical and magnetic properties. Many new phenomena emerge in low-dimensional materials, correlated oxides as well as in many conventional semiconductors such as Si and SiC and newly emerged ultra-wide bandgap semiconductors, such as Ga2O3, etc. For instance, defects can induce magnetism in low-dimensional oxides and their interfaces. Defects can induce symmetry breaking, resulting in piezoelectricity, ferroelectricity and pyroelectricity in otherwise central-symmetric materials. In 2D materials and conventional semiconductors, some defects are single-photon emitters which can be used for quantum technologies. The primary example is the NV-center in diamond, involving a nitrogen impurity and a carbon vacancy. Recently, boron vacancies in 2D hBN, Si vacancies in SiC and a carbon complex in Si, etc. have appeared as new candidates attracting huge research attention. All these recent developments also open new prospects and challenges for ion, electron and neutron beam applications, which are referred to as effective defect-engineering tools. One of the primary challenges is deterministic single-ion implantation. We plan to discuss how defects could be introduced controllably in nanostructures, oxide films as well as conventional semiconductors, characterized by advanced technologies, and functionalized for different applications. This is the main focus of the symposium.
Hot topics to be covered by the symposium:
- Theory of defects in solids
- Multiscale computer modelling of defect creation and transformation
- Defects in perovskites, topological insulators, organic semiconductors and other novel materials
- Defects in nanosized materials and heterostructures; the role of interfaces, nonstoichiometry
- Application of defects in quantum technologies
- Defect-induced magnetism in solids
- Novel experimental methods in defect research and characterization, including, but not limited to, electron and scanning probe microscopy, synchrotron, positron and neutron techniques
- Role of defects in resistive switching phenomena
- New developments in optical and magnetic resonance spectroscopy of defects in solids
- Application of artificial intelligence in defect research
- Defects in state-of-the-art solid-state electronic devices
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Anker Engelunds Vej 1, Bygning 310, 2800 Kongens Lyngby, Denmark
daepa@dtu.dkAl. Lotnikow 32 /46 , 02668 Warsaw, Poland
guzel@ifpan.edu.plDepartamento de Física and I3N, Campus de Santiago, 3810-193 Aveiro, Portugal
sobolev@ua.ptBautzner Landstr. 400, 01328 Dresden, Germany
s.zhou@hzdr.de