Defect-induced effects in low-dimensional and novel materials

Following the success of the eighth previous similar symposia held since 2012, this edition addresses the progress in tailoring properties of low-dimensional and other novel materials including, but not limited to, semiconductors and oxides by introducing defects and impurities. Native, technological and radiation defects will be considered theoretically and experimentally.

Scope:

Defects, inevitably appearing in any materials, play a vital role in shaping materials’ electronic, optical and magnetic properties. Many new phenomena emerge in low-dimensional materials, correlated oxides as well as in many conventional semiconductors such as Si and SiC and newly emerged ultra-wide bandgap semiconductors, such as Ga2O3, etc. For instance, defects can induce magnetism in low-dimensional oxides and their interfaces. Defects can induce symmetry breaking, resulting in piezoelectricity, ferroelectricity and pyroelectricity in otherwise central-symmetric materials. In 2D materials and conventional semiconductors, some defects are single-photon emitters which can be used for quantum technologies. The primary example is the NV-center in diamond, involving a nitrogen impurity and a carbon vacancy. Recently, boron vacancies in 2D hBN, Si vacancies in SiC and a carbon complex in Si, etc. have appeared as new candidates attracting huge research attention. All these recent developments also open new prospects and challenges for ion, electron and neutron beam applications, which are referred to as effective defect-engineering tools. One of the primary challenges is deterministic single-ion implantation. We plan to discuss how defects could be introduced controllably in nanostructures, oxide films as well as conventional semiconductors, characterized by advanced technologies, and functionalized for different applications. This is the main focus of the symposium.

Hot topics to be covered by the symposium:

• Theory of defects in solids
• Multiscale computer modelling of defect creation and transformation
• Defects in perovskites, topological insulators, organic semiconductors and other novel materials
• Defects in nanosized materials and heterostructures; the role of interfaces, nonstoichiometry
• Application of defects in quantum technologies
• Defect-induced magnetism in solids
• Novel experimental methods in defect research and characterization, including, but not limited to, electron and scanning probe microscopy, synchrotron, positron and neutron techniques
• Role of defects in resistive switching phenomena
• New developments in optical and magnetic resonance spectroscopy of defects in solids
• Application of artificial intelligence in defect research
• Defects in state-of-the-art solid-state electronic devices

Confirmed invited speakers:

• Arthur Ernst,  Max Planck Institute of Microstructure Physics, Germany, Topological defects in oxide films
• Magdalena Birowska, Univ. Warsaw, Defects in 2D materials and van der Waals heterostructures based on DFT calculation
• Wenyi Huo, National Centre for Nuclear Research, Poland, Induced defects in high-entropy materials and their effects'
• Maria Eugenia Toimil-Molares, GSI, Germany, 3D nanostructring by GeV ion beams
• Juan Maria García Lastra, DTU Denmark, tbd
• Paul Muralt, EPFL, Induced piezoelectricity in fluorite-type oxides
• Mariona Coll, ICMAB Spain, Defects, strain and interface control in single crystalline complex oxide membranes
• Pavan Nukala, IISC, India, Visualizing the interplay of ferroelectricity, piezoelectricity and 2D nature in In2Se3 in FETs through in situ microscopy
• Mónica Burriel, Grenoble-INP, New in situ isotope exchange Raman spectroscopy (IERS) methodologies for measuring oxygen defect transport kinetics
• Nini Pryds, DTU Denmark, Redefining Material Design: The Impact of Freestanding Oxide Membranes
• John L Lyons, US Naval Research, Doping strategies for the halide perovskites
• Albena Paskaleva, Bulgarian Academy of Sciences, tbd
• Dong Jik Kim, HZB Germany, Ferroelectricity and domain structures in defect-induced nanoislands and nanodisks
• Andrew A. BETTIOL, NUS, Singapore, Engineering spin defects in 2D materials using mega-electron volt focused ion beams
• Feng Ren, Wuhan Univ., China, Enhanced performance of (photo)electrocatalytic nanomaterials through introducing defects by ion beam
• Seungbum Hong, KAIST, Korea, Nanoscale visualization of filaments composed of defects in oxide thin films
• Pierre-Eymeric Janolin, CNRS, France, Electrostriction in oxygen-deficient materials