Electronic, Photonic, Nano, Low-dimensional and Quantum Materials
QGroup-IV semiconductor materials for nanoelectronics and cryogenic electronics
Group-IV semiconductors, namely Si, Ge, Sn and their compounds, are the most important materials in micro- and nanoelectronics but they will also play a key role in future quantum devices. This symposium aims to share the latest research in the field of group-IV nanoelectronic and cryoelectronic materials and devices.
Scope:
Silicon (Si) is one of the most dominant semiconductor materials with versatile applications ranging from electronics over photovoltaics to sensors and actuators. Due to its intrinsically higher electron and hole mobility germanium (Ge) or silicon-germanium (SiGe) are rapidly gaining interest in micro- and nanoelectronics. The same holds true for tin (Sn) and its alloys with the other group-IV semiconductors (e.g., GeSn).
In current nanoelectronics research with device dimensions approaching the single-digit-nanometer scale, nanowires are often the envisioned building blocks of transistors. However, many processing methods and device concepts have to be adopted to nanostructures which are generically subject to nano-size and quantum effects. Such effects involve quantum confinement, dielectric confinement, detrimental surface states, statistical issues of doping ultrasmall volumes, etc., bearing the risk to deteriorate the performance and reliability or even cause complete failure of low nanoscale transistors. On the other hand, if fully understood, nano-size and quantum effects may open up new vistas for increased performance, reduced power consumption or even routes towards quantum computing.
Generally, nanostructures have a high surface-to-volume ratio and their properties are often dominated by the surface. Therefore, an increased understanding of the physical and chemical properties of group-IV semiconductor nanostructure interfaces to metals and dielectrics is mandatory to control and optimize gate control, threshold voltage, ohmic contacts, carrier transport, etc.
Finally, simulations and modelling are crucial for nanoelectronics, starting from ab-initio methods to model physical/quantum-chemical properties of group-IV nanostructures to device simulations modelling transport and performance.
Hot topics to be covered by the symposium:
- Group-IV semiconductors (Si, Ge, Sn) and their mixtures/alloys for nanoelectronics
- Fabrication, functionalization, doping, defect engineering of group-IV semiconductor nanostructures
- Advanced contacts and dielectrics for group-IV nanoelectronics
- Emerging device concepts (gate-all-around GAA-FETs, junctionless JL-FETs, steep- subthreshold slope FETs, functionality enhanced FETs, etc.)
- Characterization and metrology of group-IV nanostructures and nanoelectronic devices
- Simulations and modelling of fundamental properties and devices
- Integration of 2D-materials with group-IV semiconductor nanostructures
- Group-IV semiconductor devices towards quantum computing (solid state spin qubits)
- Cryogenic electronics
- Sensing applications
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Institute of Applied Physics (IAP), Leipziger Str. 23 - 09599 Freiberg, Germany
daniel.hiller@physik.tu-freiberg.de60 Mills Rd, Canberra, ACT 2601, Australia
dirk.koenig@anu.edu.auAltenberger Straße 69, 4040 Linz, Austria
moritz.brehm@jku.atLee Maltings, Dyke Parade - Cork T12 SRCP, Ireland
ray.duffy@tyndall.ie