Integration of advanced materials on silicon: from classical to neuromorphic and quantum applications

The symposium aims at gathering scientists working on monolithic and heterogeneous integrations of new materials, to enable additional functionalities on silicon-based platforms. Its originality lies in the fact that it considers both classical approaches and emerging topics linked to neuromorphic and quantum applications. The various research fields covered in the symposium pave the way towards highly functionalized Si-based technologies which address current and future challenges in our society.

Scope:

The microelectronics industry has achieved faster, more efficient computing through decades of downscaling classical MOS transistors, improving performance and reducing energy consumption with each new technology node. This progress has resulted in high-performance personal computers and low-power mobile devices, now widely accessible. However, with the increasing demand for high-performance devices and mass data transfer driven by the “Internet of Things”, ultra-fast data communication, and emerging computing paradigms like neuromorphic and quantum computing, industry is having to innovate beyond the traditional approach of transistor scaling. This not only includes development of novel transistor architectures, but the development and integration of new device technologies, while maintaining the use of conventional silicon platforms.

Neuromorphic networks, for instance, require dense device arrays patterned on silicon using the processing know-how generated by the conventional industry. For quantum information science, silicon is also emerging as a promising platform. High-fidelity silicon qubit devices show potential for scalability, and programmable quantum circuits based on silicon photonics are under active investigation. Even materials like topological insulators, semiconductor quantum dots, and superconducting materials may find a home in silicon-based platforms for future device integration. In this context, photonic devices directly integrated on silicon, either monolithically or through heterogeneous approaches, are paramount for future development of the electronic industry.

The symposium covers fundamental (new) material properties, innovative integration techniques, and new applications. The focus will be on the fabrication, characterization and simulation of materials and devices considered non-standard for Si technology. In this context, for example semiconductor nanostructures and quantum dots play a fundamental role due to their peculiar optoelectronic characteristics. Contributions related to innovative hetero-integration techniques, such as transfer and printing approaches, will be encouraged. Finally, particular attention will be given to devices and applications beyond current computation technologies that aim at addressing new computing paradigms such as quantum and neuromorphic computation. The productive interaction across disciplines will help materials scientists drive the exciting transition towards higher-value, highly functionalized Si-based microelectronics.

In addition, a special session series will focus on GeSn integration on silicon, highlighting latest results about GeSn growth, characterization, and GeSn-based devices. These sessions will also host and emphasize the results of the EU-funded LASTSTEP project, stimulating discussion with the scientific community dealing with GeSn growth, characterization, and exploitation. Key objectives of the special sessions include reviewing GeSn research, advances in GeSn-based light sources and photodetectors, and fostering collaborations to commercialize GeSn photonic devices.

Hot topics to be covered by the symposium:

Material growth, characterization and simulation:

Group IV and compound semiconductors – from micro to nanoscale:

• Group IV materials and alloys (SiGe, GeSn SiGeSn, etc.), III-V (AlN, ScN, GaN, GaSb, InP, InAs, etc.) and II-VI compound semiconductors grown or transferred on monocrystalline substrates or insulators.
• Group IV and III-V quantum dots and nanowires integrated on Si.

2-dimensional materials:

• Growth and transfer of Transition Metal Dichalcogenides and Boron Nitride on semiconductors, hybrid 2D/semiconductor devices.

Novel materials for Quantum applications

• Semiconductor/Superconductor Interfaces, Topological insulators, Semiconductor Quantum Dot qubit Materials, purified 28Si, Spin qubit, Si/SiGe Heterostructures

Integration Techniques:

Advanced heteroepitaxy:

• Selective growth on patterned substrates, epitaxial lateral overgrowth, self-assembly techniques, remote epitaxy.

Layer or device transfer:

• µ-Transfer Printing, membrane transfer, jet printing.

2.5D & 3D integration (monolithic & heterogeneous)

Innovative synthesis & integration methods of materials and devices used for quantum systems

Applications:

Data processing and communication:

• Advanced CMOS scaling, single electron & single-photon devices, neuromorphic architectures, IOT, spintronics, ultra-low power & RF electronics, Integrated photonics, EPICs, IR and THz lasers.

Neuromorphic systems:

• Bioinspired nanoelectronics or photonics, neural networks on chips, with possible use in artificial intelligence and machine learning.

Quantum information science and emerging applications of quantum materials:

• Quantum communication, quantum computing, quantum sensing, quantum photonics.

Life-Sciences application and environmental sensors:

• Semiconductor plasmonic, mid-infrared and THz sensing, gas sensors, integration with piezo-materials for MEMS-like sensors and opto-mechanics.
• Imaging and industrial applications:
• CMOS imaging at SWIR/MWIR/LWIR wavelengths, integrated spectroscopy, hyperspectral imaging