Carrier transport, photonics and sensing in group IV-based and other semiconductors

The new composites, nanostructures and designs of group IV materials provide a platform for   Nanoelectronics, Photonics and Sensors. The symposium will focus on group IV materials, nanostructures and related devices with the objective to bring together scientists working in different application fields.

Scope:

The scope of the proposed symposium includes both experimental and theoretical innovations related to group IV and III-V nanomaterials for nanoelectronics, nanophotonics and sensors. An emphasis will be made on material synthesis, material processing, material design, carrier transport as well as light emission and light detection and sensors.
These topics have attracted increasing attention in the recent years for various applications, including infrared communication, imaging, light emitting, advanced integration of photonic and electronic structures. The very critical issues are therefore carrier transport properties and lifetimes which will be reflected in the symposium program.
The electronic topic has particular interest on electronic materials, design of different electronic devices, carrier mobility, and electrical characterization.
The photonic topic has particular interest on photonic materials, detectors, light emitting sources, waveguides, optical modulators. Additional topics in the symposium scope are defects, strain engineering and the impact of crystal quality on the properties of electronic and photonic devices.
The sensor topic covers the field of biological and chemical sensing by allowing ultra-high sensing performances.
Simulations and calculations of nanodevices, predicting their physical properties and performances are vital to successful device design and optimization. This is particularly important when novel alloys and structures are involved; and in the case of nanoscale devices, where conventional approximations can no longer be applied.
The symposium brings together the whole chain of novel technological and scientific developments in the field of Material Science characterization, device design and fabrication; and finally, device characterization, simulation and modeling. New applications will be welcomed as well.

Hot topics to be covered by the symposium:

• Fabrication and characterization of group IV- and III-V- based nanostructures, nano-devices and nano-sensors
• New mechanisms of crystal growth and synthesis
• Nano-structuration and self-organization
• Carrier transport
• Thermoelectric and heat transport
• Optoelectronic materials and devices using hetero-structures and nanostructures;
• Integration of photonics with electronics
• Strain and substrate engineering
• Defect engineering and characterization
• Si-based optical modulators, switches and detectors
• Si-based waveguide technology and nano-devices
• Luminescence in Si- and III-V- based materials
• Photonic crystals
• Nanomaterials for life science applications
• Nanoscale biosensors
• 2D materials based on group IV materials

List of invited speakers:

• Douglas. Paul, Glasgow University, UK, “Development of Ge on Si single photon avalanche diode photodetectors at telecoms wavelengths”.
• Guilei Wang, Beijing Superstring Academy of Memory Technology, China, “SiGe/Si heterostructures for CMOS and vertically stacked DRAM, a new technology development”.
• Steve J. Koester, University of Minnesota, USA, “Electrical properties and applications of 2D materials deposited by atomic layer deposition”.
• Johnny CY Ho, City University of Hong Kong, Hong Kong, “Design of Optoelectronic Devices through Phase Change, Doping, and Multi-Dimensional Heterostructure Engineering”.
• Zheng Liu, Nanyang Technological University, Singapore, “Two-Dimensional Heterostructures for Ultra-fast Optoelectronic Sensors”.
• Jesús Zúñiga-Pérez , CRHEA-CNRS, France,  ”Quantum sensing with point defects in wide-bandgap semiconductors”.
• Maksym Myronov, University of Warrick, UK, “ High mobility group IV and other semiconductors “
• Kevin-Peter Gradwohl, Leibniz-Institut für Kristallzüchtung, Germany, “Prospects of Isotope-pure SiGe Heterostructures for Quantum Technologies”.
• Marc Bescond, CNRS – IM2NP, France, "Innovative cooling nanodevices based on III-V heterostructures: thermionic and optical refrigeration".
• Shengqiang Zhou, Institute of Ion Beam Physics and Materials Research, Germany, "Chalcogen hyperdoped Silicon for monolithically integrated infrared optoelectronics".

List of scientific committee members:

• Anders Halen, KTH Royal Institute of Technology, Sweden
• Safa Kasap, University of Saskatchewan, Canada
• Seongjae Cho, Gachon University, Republic of Korea
• Zhiyong Fan, Hong Kong University of Science and Technology, Hong Kong
• Rasit Turan, Middle East Technical University, Turkey
• Lis Nanver, Dimes, Delft University, The Netherlands
• Xun Gu, ASM Japan, Japan
• Yuanhao Miao, Guangdong Greater Bay Institute, Guangzhou, China
• Monica Bollani, Institute (IFN)-CNR, LNESS laboratory, Italy 

Publication:

Special issue in Journal of Materials Science: Materials in Electronics (JMSE)