III-nitrides and their use in electronics and optoelectronics

The symposium is planned as a platform for exchanging research results and discussions related to III-nitride semiconductor growth, characterization and device fabrication. This includes traditional materials: GaN, InGaN, AlGaN, as well as so-called new nitrides: NbN, ScAlN.

Scope:

The scope of the symposium covers the most popular topics related to III-nitride fabrication and technology. The subjects can be divided into the following main groups.

a)    Growth of nitride semiconductors

Our interest begins at the level of growth of bulk crystals: GaN, AlN, useful for the further steps of the nitride technology. Next, the scope includes the challenges of nitride epitaxial growth by metalorganic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). Our interest also spans from typical lateral growth to more complex 3D growth of nanostructures. Finally, we will cover the emerging fields of growth of novel nitride materials such as NbN and ScAlN.

b)    Material characterization

We encourage abstracts related to various aspects and methods of material studies. Our interest includes research on dopants and defects in nitride semiconductors. We will also cover the problem of microstructural analysis of nitride devices.

c)    Optoelectronics

We are interested in the subject of nitride light emitting diodes including current important trends: UV LEDs and the use of micro-LEDs for fabrication of efficient RGB displays. The program also covers nitride laser diodes, edge-emitting as well as vertical-cavity surface-emitting lasers (VCSELs), both in visible and UV region. We are also open to novel concepts such as photonic integrated circuits.

d)    Electronics

The symposium will include all the trending nitride electronics topics. We will cover the power and radio frequency (RF) electron devices. We also plan a dedicated session for semi-vertical and vertical electronic devices. We welcome submissions on metal-oxide-semiconductor (MOS) structures. Finally, the program will include AlN-based electronic devices.

Hot topics to be covered by the symposium:

• AlN-based electronic devices
• Defects in gallium nitride
• Micro and nano nitride light emitters
• Novel nitride materials
• Red-emitting nitrides
• Reliability of nitride devices
• UV nitride emitters
• Vertical electronic devices

Invited speakers:

• Oliver Ambacher (Department of Sustainable Systems Engineering, University of Freiburg, Germany) “Comparative evaluation of the structural and piezo-acoustic properties of ternary metal nitrides for applications in bulk acoustic wave devices”
• Peter Brückner (Fraunhofer Institute for Applied Solid State Physics IAF, Germany) “IAF GaN-technology towards 200 GHz operation”
• Patrick Diehle (Center for Applied Microstructure Diagnostics, Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Germany) ”Microstructural Failure Analysis in GaN devices”
• Åsa Haglund (Department Microtechnology and Nanoscience, Chalmers University of Technology, Sweden) “Surface-emitting lasers in the deep-ultraviolet”
• Debdeep Jena (Electrical and Computer Engineering and Materials Science and Engineering, Cornell University, USA) “Ultrawide bandgap POLFETs on bulk AlN using distributed polarization doping”
• Lutz Kirste (Fraunhofer Institute for Applied Solid State Physics IAF, Germany) “Status of Bulk GaN Substrates from the Perspective of Bragg Diffraction Imaging Analysis”
• Atsushi Kobayashi (Department of Materials Science and Technology, Tokyo University of Science, Japan) “Sputter Epitaxy of Transition Metal Nitrides on Nitride Semiconductors”
• Takeru Kumabe (Department of electronics, Nagoya University, Japan) “Demonstration of AlGaN-on-AlN p-n Diodes with Dopant-free Distributed Polarization Doping”
• Kei May Lau (Department of Electronic & Computer Engineering, Hong Kong University of Science and Technology) “Vertical GaN MOS transistor grown on SiC substrates”
• Irene Manglano Clavero (Faculty of Electrical Engineering, Information Technology, Physics, Technical University of Braunschweig, Germany) “Epitaxy of Three-Dimensional GaN Microstructures: Challenges and Prospects”
• Kazuhiro Ohkawa (Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Techn., Saudi Arabia) “Development of InGaN red micro-LEDs and toward their laser diodes”
• Jose Pedro (Instituto de Telecomunicações, University of Aveiro, Portugal) “AlGaN/GaN RF Power HEMTs: The Workhorse Technology for 5G and 6G Base-Station Transmitters”
• Thomas Sannicolo (Aledia, France) “GaN-on-Si nanowire technology paves the way to high efficiency micro-LEDs for display applications”
• Filip Tuomisto (Department of Physics, University of Helsinki, Finland) “Analyzing vacancy defects in GaN and AlN”
• Giovanni Verzellesi (Department of Sciences and Methods for Engineering, University of Modena and Reggio Emilia, Italy) “Modelling of trapping effects in GaN power transistors”
• Tim Wernicke (Institute of Solid-State Physics, Technical University of Berlin, Germany) “Metalorganic vapor phase epitaxy of AlGaN based UVC LEDs”
• Elçin Akar (CEA Grenoble, France) “A New Insight into the Growth Kinetics of Mg-doped GaN Using Plasma-Assisted Molecular Beam Epitaxy”
• Muhammed Aktaş (Institute of High Pressure Physics of the Polish Academy of Sciences, Poland) “Polarization-doped III-N laser diode operating at cryogenic temperature”
• Yoshinobu Matsuda (Kyoto University, Japan) “InGaN-based multicolor micro-LED arrays via epitaxial integration”