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Nanomaterials and Functional Materials

Defect-induced effects in low-dimensional and novel materials

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Information

Following the success of the seven previous similar symposia held since 2012, this edition addresses the progress in tailoring properties of low-dimensional and other novel materials by introducing defects and impurities. Native, technological and radiation defects will be considered theoretically and experimentally.

Scope:

Defects in solids never tire of surprising researchers. Due to the wide applications of nanotechnology, it is necessary to invest efforts in studying the formation and evolution of defects at the nanoscale. The high sensitivity of modern technologies on the submicron scale to defects has promoted the exciting opportunity of developing new advanced materials with reduced dimensionality. This opens new prospects for ion and electron beam applications. Ion tracks and other radiation-induced effects provide a means for controlled synthesis and modification of low-dimensional materials, such as nanoclusters and nanowires, allowing for efficient nano- and optoelectronic devices. Defect behaviour in nanomaterials and nanostructures in its turn has often been found to differ substantially from that observed in bulk materials. Recent work has demonstrated spectacular optical and magnetic effects due to deliberately created defects or radiationinduced transformation of nanomaterials as well as radiation-induced displacements in low-dimensional insulators and semiconductors, with numerous potential applications. We plan to discuss how such defects could be introduced controllably, categorized and controlled in nanostructures. Understanding and controlling defect properties and capturing the grain boundary effects in a wide class of advanced nanostructures (novel 2D materials, multiferroics, quantum dots and wires, etc.) could well be a key to breakthroughs in several crucial areas of science and technology. This is the main focus of the symposium.

Hot topics to be covered by the symposium:

Multiscale computer modelling of defect creation and transformation
Defects in perovskites, topological insulators, organic semiconductors and other novel materials
Defects in nanosized materials and heterostructures; the role of interfaces, nonstoichiometry
Defects in nanodevices
Novel experimental techniques in defect research and visualisation
Role of defects in resistive switching phenomena
Synchrotron and neutron techniques for materials characterization
Quantum computing with defects
Novel technological processes of micro-, nano- and optoelectronics using defects and radiation effects
DFT and AI methods for description of defects in nanomaterials

List of invited speakers:

	Name	Talk Title	Affiliation
1.	Anatoli Popov	Radiation effects in functional ceramics for fusion application	University of Latvia, Riga
2.	Andrej Kuznetsov	Defect-induced nano-engineering of polymorph heterostructures	University of Oslo, Norway
3.	Eugene Kotomin	The Band Gap Engineering of Perovskite Nanoparticles for Photostimulated Hydrogen Production	University of Latvia, Riga
4.	Daesung Park	Emergence of Piezoelectric and Pyroelectric Effects in Centrosymmetric Oxides by Controlling Ionic Defects	Technical University of Denmark
5.	Sabine Körbel	Optical signatures of defects at ferroelectric domain walls in bismuth ferrite	Friedrich Schiller University Jena, Germany
6.	Alexander Shluger	An Interplay between Electronic and Ionic Processes in Oxide Resistive Switching Devices	University College London, UK
7.	Peter K. Petrov	Fabrication of Devices Based on Nanocrystalline Multilayer Graphene and Graphene/Oxide Multilayer Structures	Imperial College London
8.	Jinglai Duan	SHI irradiation effects on polymers and their applications in fabrication of novel nanostructures	Institute of Modern Physics, Chinese Ac. Sci., Lanzhou
9.	Feng Chen	Ion beam-induced defects in 2D materials for optoelectronic applications	Shandong University, PR China
11.	Takeshi Ohshima	Spin defects in SiC: Creation and Sensing Application	National Institutes for Quantum Science and Technology, Japan
14.	Paul M. Koenraad	Electronic properties and pairing of iso-electronic dopants in III/V materials studied at the single defect level by STM	Eindhoven University of Technology, The Netherlands
15.	Steven Clowes	Single ion implanter for quantum technology	University of Surrey, Guildford, UK