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Nanomaterials and Functional Materials

Q

Defect-induced effects in low-dimensional and novel materials

Following the success of the seven previous similar symposia held since 2012, this edition addresses the progress in tailoring properties of low-dimensional and other novel materials by introducing defects and impurities. Native, technological and radiation defects will be considered theoretically and experimentally.

Scope:

Defects in solids never tire of surprising researchers. Due to the wide applications of nanotechnology, it is necessary to invest efforts in studying the formation and evolution of defects at the nanoscale. The high sensitivity of modern technologies on the submicron scale to defects has promoted the exciting opportunity of developing new advanced materials with reduced dimensionality. This opens new prospects for ion and electron beam applications. Ion tracks and other radiation-induced effects provide a means for controlled synthesis and modification of low-dimensional materials, such as nanoclusters and nanowires, allowing for efficient nano- and optoelectronic devices. Defect behaviour in nanomaterials and nanostructures in its turn has often been found to differ substantially from that observed in bulk materials. Recent work has demonstrated spectacular optical and magnetic effects due to deliberately created defects or radiationinduced transformation of nanomaterials as well as radiation-induced displacements in low-dimensional insulators and semiconductors, with numerous potential applications. We plan to discuss how such defects could be introduced controllably, categorized and controlled in nanostructures. Understanding and controlling defect properties and capturing the grain boundary effects in a wide class of advanced nanostructures (novel 2D materials, multiferroics, quantum dots and wires, etc.) could well be a key to breakthroughs in several crucial areas of science and technology. This is the main focus of the symposium.

Hot topics to be covered by the symposium:

  • Multiscale computer modelling of defect creation and transformation
  • Defects in perovskites, topological insulators, organic semiconductors and other novel materials
  • Defects in nanosized materials and heterostructures; the role of interfaces, nonstoichiometry
  • Defects in nanodevices
  • Novel experimental techniques in defect research and visualisation
  • Role of defects in resistive switching phenomena
  • Synchrotron and neutron techniques for materials characterization
  • Quantum computing with defects
  • Novel technological processes of micro-, nano- and optoelectronics using defects and radiation effects
  • DFT and AI methods for description of defects in nanomaterials

List of invited speakers:

 

Name

Talk Title

Affiliation

1.

Anatoli Popov

Radiation effects in functional ceramics for fusion application

University of Latvia, Riga

2.

Andrej Kuznetsov

Defect-induced nano-engineering of polymorph heterostructures

University of Oslo, Norway

3.

Eugene Kotomin

The Band Gap Engineering of Perovskite Nanoparticles for Photostimulated Hydrogen Production

University of Latvia, Riga

4.

Daesung Park

Emergence of Piezoelectric and Pyroelectric Effects in Centrosymmetric Oxides by Controlling Ionic Defects

Technical University of Denmark

5.

Sabine Körbel

Optical signatures of defects at ferroelectric domain walls in bismuth ferrite

Friedrich Schiller University Jena, Germany

6.

Alexander Shluger

An Interplay between Electronic and Ionic Processes in Oxide Resistive Switching Devices

University College London, UK

7.

Peter K. Petrov

Fabrication of Devices Based on Nanocrystalline Multilayer Graphene and Graphene/Oxide Multilayer Structures

Imperial College London

8.

Jinglai Duan

SHI irradiation effects on polymers and their applications in fabrication of novel nanostructures

Institute of Modern Physics, Chinese Ac. Sci., Lanzhou

9.

Feng Chen

Ion beam-induced defects in 2D materials for optoelectronic applications

Shandong University, PR China

11.

Takeshi Ohshima

Spin defects in SiC: Creation and Sensing Application

National Institutes for Quantum Science and Technology, Japan

14.

Paul M. Koenraad

Electronic properties and pairing of iso-electronic dopants in III/V materials studied at the single defect level by STM

Eindhoven University of Technology, The Netherlands

15.

Steven Clowes

Single ion implanter for quantum technology

University of Surrey, Guildford, UK

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Symposium organizers
Agata LISINSKA-CZEKAJ (Main Organizer)Gdańsk University of Technology

80-233 Gdańsk, 11/12 Narutowicza St. Poland

agata.czekaj@pg.edu.pl
Mikhail BRIKUniversity of Tartu

W. Ostwald Str 1, Tartu 50411, Estonia

mikhail.brik@ut.ee
Nikolai A. SOBOLEVUniversidade de Aveiro

Departamento de Física and I3N, Campus de Santiago, 3810-193 Aveiro, Portugal

sobolev@ua.pt
Shengqiang ZHOUHelmholtz-Zentrum Dresden-Rossendorf

Bautzner Landstr. 400, 01328 Dresden, Germany

s.zhou@hzdr.de